808 nm QCW Laser Diode Unmounted Bar , 200 watt High Power Laser Diode Bar
Semiconductor lasers are the centerpiece of most of today’s industrial laser systems. Whether direct material processing or optical pumping of solid-state lasers, fiber lasers or disc lasers, the unmounted single emitters and bars are the key component for the initial conversion of electrical energy into light.
HTOE has been focusing on the semiconductor wafer technology from 1998, delivers the multimode high power at wavelengths between 635 and 1064nm.
- High Power multimode unmounted bars up to 40W CW and 200W QCW output
- Unmounted single emitters up to 2W CW Power
- Available wavelengths include 635nm, 650nm, 808nm, 980nm and 1064nm
Parameters(25℃)
| Parameter | Unit | LDAQ1-0808-0200 |
| Optical Parameter | Operation Mode | - | QCW |
| Output Power Po | W | 200 |
| Center Wavelength λc | nm | 808 ± 5 |
| Geometrical | Fill Factor | - | 71% |
| Number of Unmounted Single Emitters | - | 58 |
| Electrical Parameter | Slope Efficiency Es | W/A | ≥1.2 |
| Threshold Current Ith | A | ≤30 |
| Operating Current If | A | ≤200 |
| Operating Voltage Vf | V | ≤4 |
Notice
1. Item notice: LDAQ1( item model)-****( center wavelength)-****( output power).
2. Data sheet is based on the result of testing under 25℃, pulse width 200μs, frequency 50Hz, and duty cycle 1%.
3. Data sheet is based on the CS package testing.
4. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.
Product Tags:
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635- 1064nm Micro Channel Diode Bars 58 Unmounted Single Emitters Images
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